IEC 60747 Series - Semiconductor Devices
The IEC 60747 series of semiconductor standards covers discrete devices, integrated circuits, semiconductor sensors, microwave integrated circuits, and others as part of its 28 part series. These devices are used as the building blocks for a wide range of more complicated devices, so standardization at this level directly contributes to the standardization of levels further down the design and fabrication process.
IEC 60747-1 Ed. 2.1 b:2010
Semiconductor devices - Part 1: General
"IEC 60747-1:2006+A1:2010 gives the general requirements applicable to the discrete semiconductor devices and integrated circuits covered by the other parts of IEC 60747 and IEC 60748 (see Annex A). This consolidated version consists of the second edition (2006) and its amendment 1 (2010). Therefore, no need to order amendment in addition to this publication. "
IEC 60747-2 Ed. 3.0 b:2016
Semiconductor devices - Part 2: Discrete devices - Rectifier diodes
IEC 60747-2:2016 provides standards for the following categories or sub-categories of rectifier diodes, including: - line rectifier diodes; - avalanche rectifier diodes; - fast-switching rectifier diodes; - Schottky barrier diodes. This edition includes the following significant technical changes with respect to the previous edition: a) Schottky barrier diodes and its properties are added; b) Clauses 3, 4, 5 and 7 were amended with some deletions of information no longer in use or already included in other parts of the IEC 60747 series, and with some necessary additions; c) Clause 6 was moved and added to Clause 7 of this third edition; d) some parts of Clause 7 were moved and added to Clause 7 of this third edition; e) Annex A was deleted. This publication is to be read in conjunction with IEC 60747-1:2006 .
IEC 60747-3 Ed. 2.0 b:2013
Semiconductor devices - Part 3: Discrete devices: Signal, switching and regulator diodes
IEC 60747-3:2013 gives the requirements for the following devices: - signal diodes (excluding diodes designed to operate at frequencies above several hundred MHz); - switching diodes (excluding high power rectifier diodes); - voltage-regulator diodes; voltage-reference diodes; - current-regulator diodes. This edition includes the following significant technical changes with respect to the previous edition: a) All clauses were re-edited to latest IEC publication format and style with all contents from previous publication. b) All clauses have been amended by suitable additions and deletions. This publication should be read in conjunction with IEC 60747-1:2006 .
IEC 60747-4 Ed. 2.0 b:2007
Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
"Provides requirements for the following categories of discrete devices: variable capacitance diodes and snap-off diodes, mixer diodes and detector diodes, avalanche diodes, gunn diodes,bipolar transistors and field-effect transistors. This second edition cancels and replaces the first edition, published in 1991, its amendments 1, 2 and 3 (1993, 1999 and 2001, respectively), and constitutes a technical revision."
IEC 60747-5-4 Ed. 1.0 b:2006
Semiconductor devices - Discrete devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
Deals with the terminology, the essential ratings and characteristics as well as the measuring methods of semiconductor lasers.
IEC 60747-17 Ed. 1.0 b:2020
Semiconductor devices - Part 17: Magnetic and capacitive coupler for basic and reinforced insulation
IEC 60747-17:2020 specifies the terminology, essential ratings, characteristics, safety test and the measuring methods of magnetic coupler and capacitive coupler.
It specifies the principles and requirements of insulation and isolation characteristics for magnetic and capacitive couplers for basic insulation and reinforced insulation.
This first edition cancels and replaces IEC PAS 60747-17:2011. This edition constitutes a technical revision.
This edition includes the following significant technical changes with respect to IEC PAS 60747-17:2011:
a) introduced lifetime safety factors for improved life time consideration, to comply with widely recognized aging mechanisms of silicone dioxide (TDDB) and thin film polymer isolation layers;
b) significantly improved "end of life testing" paragraph and statistical life time consideration by adding detailed description on process, safety factors, methods of generating data points and respective lifetime interpolations as well as being specific on minimum amount of samples required;
c) introduced concept of certification by similarity, including Annex A, giving guidance on qualification considerations and required certification process;
d) alternative pulse shape allowed for surge pulse testing, to avoid issues due to surge tester availability;
e) various improvements throughout the standard: definitions, for example type of coupler have been improved, introduction of surge impulse VIMP rating, usage of glass transition temperature, pre-conditioning have been redefined for improved usability and better compatibility with today’s design and functionality of couplers, available mold compounds, etc.
IEC 60747-5-6 Ed. 2.0 en:2021
Semiconductor devices - Part 5-6: Optoelectronic devices - Light emitting diodes
IEC 60747-5-6:2021 is available as IEC 60747-5-6:2021 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition. IEC 60747-5-6:2021 specifies the terminology, the essential ratings and characteristics, the measuring methods and the quality evaluations of light emitting diodes (LEDs) for general industrial applications such as signals, controllers, sensors, etc. LEDs for lighting applications are out of the scope of this part of IEC 60747. LEDs are classified as follows: - LED package; - LED flat illuminator; - LED numeric display and alpha-numeric display; - LED dot-matrix display; - infrared-emitting diode (IR LED); - ultraviolet-emitting diode (UV LED). LEDs with a heat spreader or having a terminal geometry that performs the function of a heat spreader are within the scope of this part of IEC 60747. An integration of LEDs and controlgears, integrated LED modules, semi-integrated LED modules, integrated LED lamps or semi-integrated LED lamps, are out of the scope of this part of IEC 60747. This edition includes the following significant technical changes with respect to the previous edition: - ultraviolet-emitting diodes (UV LED) and their related technical contents were added; - power efficiency ( PE) as part of electrical and optical characteristics were added; - new measuring methods related to thermal resistance were added; - hydrogen sulphide corrosion test was added to quality evaluation; - some standards were added to the bibliography.
IEC 60747-6 Ed. 3.0 b:2016
Semiconductor devices - Part 6: Discrete devices - Thyristors
IEC 60747-6:2016 provides standards for the following types of discrete semiconductor devices: - reverse-blocking triode thyristors; - reverse-conducting (triode) thyristors; - bidirectional triodethyristors (triacs); - turn-off thyristors. This edition includes the following significant technical changes with respect to the previous edition: a) Clauses 3, 4, 5, 6, and 7 were amended with some deletions of information no longer in use or already included in other parts of the IEC 60747 series, and with some necessary additions; b) some parts of Clause 8 and Clause 9 were moved and added to Clause 7 of this third edition; c) Clause 8 and 9 were deleted in this third edition; d) Annex A was deleted. This publication is to be read in conjunction with IEC 60747-1:2006 .
IEC 60747-7 Ed. 3.0 b:2010
Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
"IEC 60747-7:2010 gives the requirements applicable to the following sub-categories of bipolar transistors excluding microwave transistors. - Small signal transistors (excluding switching and microwave applications); - Linear power transistors (excluding switching, high-frequency, and microwave applications); - High-frequency power transistors for amplifier and oscillator applications; - Switching transistors for high speed switching and power switching applications; - Resistor biased transistors. The main changes with respect to previous edition are listed below. a) Clause 1 was amended by adding an item that should be included. b) Clauses 3, 4, 5, 6 and 7 were amended by adding terms, definitions, suitable additions and deletions those should be included. c) The text of the second edition was combined with that of IEC 60747-7-5. This publication is to be read in conjunction with IEC 60747-1:2006 ."
IEC 60747-8 Ed. 3.0 b:2010
Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
"IEC 60747-8:2010 gives standards for the following categories of field-effect transistors: - type A: junction-gate type; - type B: insulated-gate depletion (normally on) type; - type C: insulated-gate enhancement (normally off) type. The main changes with respect to the previous edition are listed below. a) ""Clause 3 Classification"" was moved and added to Clause 1. b) ""Clause 4 Terminology and letter symbols"" was divided into ""Clause 3 Terms and definitions"" and ""Clause 4 Letter symbols"" was amended with additions and deletions. c) Clause 5, 6 and 7 were amended with necessary additions and deletions. This publication is to be read in conjunction with IEC 60747-1:2006 ."
IEC 60747-9 Ed. 3.0 b:2019
Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs). This third edition includes the following significant technical changes with respect to the previous edition: reverse-blocking IGBT and its related technical contents have been added; reverse-conducting IGBT and its related technical contents have been added; some parts of the previous edition have been amended, combined or deleted.
IEC 60747-14-1 Ed. 2.0 b:2010
Semiconductor devices - Part 14-1: Semiconductor sensors - Generic specification for sensors
"IEC 60147-14-1:2009 describes general items concerning the specifications for sensors, which are the basis for specifications given in other parts of this series for various types of sensors. Sensors described in this standard are basically made of semiconductor materials, however, the statements made in this standard are also applicable to sensors using materials other than semiconductor, for example dielectric and ferroelectric materials. The major changes with regard to the previous edition are as follows: a) Title change from ""Semiconductor sensors - General and classification"" to ""Semiconductor sensors - Generic specification for sensors""; b) Clause 3 has been divided into three Clauses 3, 4 and 5; c) Added new terms from IEC 60747-14-5; d) Added a new Clause relating to Quality assessment procedures; e) Added a Bibliography; f) Added a new Annex for the sampling procedure. "
IEC 60747-14-2 Ed. 1.0 en:2000
Semiconductor devices - Part 14-2: Semiconductor sensors - Hall elements
Provides standards for packaged semiconductor Hall elements which utilize the Hall effect.
IEC 60747-14-3 Ed. 2.0 b:2009
Semiconductor devices - Part 14-3: Semiconductor sensors - Pressure sensors
"IEC 60747-14-3:2009 specifies requirements for semiconductor pressure sensors measuring absolute, gauge or differential pressures. The major technical change with regard to the previous edition is the addition of a new subclause 5.9 (measuring method of linearity). "
IEC 60747-14-4 Ed. 1.0 b:2011
Semiconductor devices - Discrete devices - Part 14-4: Semiconductor accelerometers
"IEC 60747-14-4:2011 applies to semiconductor accelerometers for all types of products. This standard applies not only to typical semiconductor accelerometers with built-in electric circuits, but also to semiconductor accelerometers accompanied by external circuits. This standard does not (or should not) violate (or interfere with) the agreement between customers and suppliers in terms of a new model or parameters for business. NOTE 1: This standard, although directed toward semiconductor accelerometers, may be applied in whole or in part to any mass produced type of accelerometer. NOTE 2: The purpose of this standard is to allow for a systematic description, which covers the subjects initiated by the advent of semiconductor accelerometers. The tasks imposed on the semiconductor accelerometers are not only common to all accelerometers but also inherent to them and not yet totally solved. The descriptions are based on latest research results. One typical example is the multi-axis accelerometer. This standard states the method of measuring acceleration as a vector quantity using multi-axis accelerometers. NOTE 3: This standard does not conflict in any way with any existing parts of either ISO 16063 or ISO 5347. This standard intends to provide the concepts and the procedures of calibration of the semiconductor multi-axis accelerometers which are used not only for the measurement of acceleration but also for the control of motion in the wide frequencies ranging from DC. "
IEC 60747-14-5 Ed. 1.0 b:2010
Semiconductor devices - Part 14-5: Semiconductor sensors - PN-junction semiconductor temperature sensor
"IEC 60747-14-5:2010 is applicable to semiconductor PN-junction temperature sensors and defines terms, definitions, symbols, essential ratings, characteristics and test methods that can be used to determine the characteristics of semiconductor types of PN-junction temperature sensors."
IEC 60747-15 Ed. 2.0 b:2010
Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
"IEC 60747-15:2010 gives the requirements for isolated power semiconductor devices excluding devices with incorporated control circuits. These requirements are additional to those given in other parts of IEC 60747 for the corresponding non-isolated power devices. The main changes with respect to previous edition are listed below. a) Clause 3, 4 and 5 were re-edited and some of them were combined to other sub clauses. b) Clause 6, 7 were re-edited as a part of ""Measuring methods"" with amendment of suitable addition and deletion. c) Clause 8 was amended by suitable addition and deletion. d) Annex C, D and Bibliography were deleted. This publication is to be read in conjunction with IEC 60747-1:2006 ."
IEC 60747-16-1 Ed. 1.1 en:2007
Semiconductor devices - Part 16-1: Microwave integrated circuits - Amplifiers
"Provides the terminology, the essential ratings and characteristics, as well as the measuring methods, for integrated circuit microwave power amplifiers."
IEC 60747-16-2 Ed. 1.1 en:2008
Semiconductor devices - Part 16-2: Microwave integrated circuits - Frequency prescalers
"Provides new measuring methods, terminology and letter symbols, as well as essential ratings and characteristics for integrated circuit microwave frequency prescalers. This consolidated version consists of the first edition (2001) and its amendment 1 (2007). Therefore, no need to order amendment in addition to this publication. "
IEC 60747-16-3 Ed. 1.1 b:2010
Semiconductor devices - Part 16-3: Microwave integrated circuits - Frequency converters
"IEC 60747-16-3:2002+A1:2009 provides new measuring methods, terminology and letter symbols, as well as essential ratings and characteristics for integrated circuit microwave frequency converters. This consolidated version consists of the first edition (2002) and its amendment 1 (2009). Therefore, no need to order amendment in addition to this publication. "
IEC 60747-16-4 Ed. 1.1 b:2011
Semiconductor devices - Part 16-4: Microwave integrated circuits - Switches
"IEC 60747-16-4:2004+A1:2009 provides new measuring methods, terminology and letter symbols, as well as essential ratings and characteristics for integrated circuit microwave switches. There are many combinations for RF ports in switches, such as SPST (single pole single throw), SPDT (single pole double throw), SP3T (single pole triple throw), DPDT (double pole double throw), etc. Switches in this standard are based on SPDT. However, this standard is applicable to the other types of switches. This consolidated version consists of the first edition (2004) and its amendment 1 (2009). Therefore, no need to order amendment in addition to this publication. "
IEC 60747-16-5 Ed. 1.0 b:2013
Semiconductor devices - Part 16-5: Microwave integrated circuits - Oscillators
IEC 60747-16-5:2013 specifies the terminology, essential ratings and characteristics, and measuring methods of microwave integrated circuit oscillators. This standard is applicable to the fixed and voltage-controlled semiconductor microwave oscillator devices, except the oscillator modules such as synthesizers which require external controllers.
IEC 60747-16-10 Ed. 1.0 b:2004
Semiconductor devices - Part 16-10: Technology Approval Schedule (TAS) for monolithic microwave integrated circuits
IEC 60747-16-10:2004 specifies the terms, definitions, symbols, quality system, test, assessment and verification methods and other requirements relevant to the design, manufacture and supply of monolithic microwave integrated circuits in compliance with the general requirements of the IECQ-CECC System for electronic components of assessed quality.
IEC 60747-17 Ed. 1.0 b:2020
Semiconductor devices - Part 17: Magnetic and capacitive coupler for basic and reinforced insulation
IEC 60747-17:2020 specifies the terminology, essential ratings, characteristics, safety test and the measuring methods of magnetic coupler and capacitive coupler.
It specifies the principles and requirements of insulation and isolation characteristics for magnetic and capacitive couplers for basic insulation and reinforced insulation.
This first edition cancels and replaces IEC PAS 60747-17:2011. This edition constitutes a technical revision.
This edition includes the following significant technical changes with respect to IEC PAS 60747-17:2011:
a) introduced lifetime safety factors for improved life time consideration, to comply with widely recognized aging mechanisms of silicone dioxide (TDDB) and thin film polymer isolation layers;
b) significantly improved "end of life testing" paragraph and statistical life time consideration by adding detailed description on process, safety factors, methods of generating data points and respective lifetime interpolations as well as being specific on minimum amount of samples required;
c) introduced concept of certification by similarity, including Annex A, giving guidance on qualification considerations and required certification process;
d) alternative pulse shape allowed for surge pulse testing, to avoid issues due to surge tester availability;
e) various improvements throughout the standard: definitions, for example type of coupler have been improved, introduction of surge impulse VIMP rating, usage of glass transition temperature, pre-conditioning have been redefined for improved usability and better compatibility with today’s design and functionality of couplers, available mold compounds, etc.
