Document Number Keyword News
||Other Semiconductor Standards provide additional information, methods, and processes beyond those
included above. These include standards for both semiconductors and semiconductor devices, as well as the examination thereof and other areas of inquiry that don't fit into the above categories.|
IEEE Standard for Uncontrolled Traction Power Rectifiers for Substation Applications Up to 1500 V DC Nominal Output
The design, manufacturing, and testing unique to the application of uncontrolled semiconductor power rectifiers for direct current (dc) supplied transportation substation applications up to 1500 V dc nominal output is covered in this standard. The standard is intended to address traction power substation rectifiers that are to be provided as part of a rectifier transformer unit or are provided separately. Application information and extensive definitions of related technical terms are included.
IEEE Standard for Access and Control of Instrumentation Embedded within a Semiconductor Device
A methodology for accessing instrumentation embedded within a semiconductor device, without defining the instruments or their features themselves, via the IEEE 1149.1(TM) test access port (TAP) and/or other signals, is described in this standard. The elements of the methodology include a hardware architecture for the on-chip network connecting the instruments to the chip pins, a hardware description language to describe this network, and a software language and protocol for communicating with the instruments via this network.
IEEE Std C57.18.10-1998 (R2003)
IEEE Standard Practices and Requirements for Semiconductor Power Rectifier Transformers
Practices and requirements for semiconductor power rectifier transformers for dedicated loads rated single-phase 300 kW and above and three-phase 500 kW and above are included. Static precipitators, high-voltage converters for dc power transmission, and other nonlinear loads are excluded. Service conditions, both usual and unusual, are specified, or other standards are referenced as appropriate. Routine tests are specified. An informative annex provides several examples of load loss calculations for transformers when subjected to nonsinusoidal currents, based on calculations provided in the standard.
IEEE Std C62.42-2005
IEEE Guide for the Application of Component Surge-Protective Devices for Use in Low-Voltage [Equal to or Less than 1000 V (ac) or 1200 V (dc)] Circuits
This guide covers the application of component air gaps, gas tubes, MOVs, and avalanche junction semiconductor surge-protective devices for use within surge protectors, equipment, or systems involving low-voltage power, data, communication, and/or signaling circuits. This guide is intended to be used with, or to complement, the related documents referred to in 2.1.
Industrial automation systems and integration - Open systems application integration framework - Part 1: Generic reference description
ISO 15745 defines an application integration framework - a set of elements and rules for describing integration models and application interoperability profiles. ISO 15745-1:2003 defines the generic elements and rules for describing integration models and application interoperability profiles, together with their component profiles - process profiles, information exchange profiles, and resource profiles. NOTE Parts 2, 3 and 4 of ISO 15745 define the technology specific elements and rules for describing both communication network profiles and the communication related aspects of device profiles based upon particular fieldbus technologies; these parts can be used in conjunction with this part to form an application integration framework for a specific fieldbus technology. This International Standard is applicable to industrial automation applications such as discrete manufacturing, process automation, electronics assembly, semiconductor fabrication, and wide-area material handling. It may also be applicable to other automation and control applications such as utility automation, agriculture, off-road vehicles, medical and laboratory automation, and public transport systems.
Adhesives - Test methods for isotropic electrically conductive adhesives - Part 1: General test methods
ISO 16525-1:2014 specifies general test methods for isotropic electrically conductive adhesives used in wiring, die attach of semiconductors, and surface assembly of printed circuit boards.
Textiles - Determination of deodorant property - Part 5: Metal-oxide semiconductor sensor method
ISO 17299-5:2014 specifies a deodorant test method using an odour analyser equipped with multiple metal-oxide semiconductor sensors against composite odours. The artificial composite odours used in ISO 17299-5:2014 are a quasi sweat odour, a quasi body odour (nonenal mixture odour) and a quasi excrement odour. ISO 17299-5:2014 applies to all kinds of textile products, such as woven fabrics, knits, threads, yarns, fibres, braids, cords, etc.
IEC 60904-8 Ed. 3.0 b:2014
Photovoltaic devices - Part 8: Measurement of spectral responsivity of a photovoltaic (PV) device
IEC 60904-8:2014 specifies the requirements for the measurement of the spectral responsivity of both linear and non-linear photovoltaic devices. The spectral responsivity of a photovoltaic device is used in cell development and cell analysis, as it provides a measure of recombination and other processes occurring inside the semiconductor or cell material system. The main technical changes with respect to the previous edition are listed below: - re-writing of the clause on testing; - addition of a new clause for the measurement of series-connected modules; - addition of the requirements of ISO/IEC 17025.
IEC 61207-7 Ed. 1.0 b:2013
Expression of performance of gas analyzers - Part 7: Tuneable semiconductor laser gas analyzers
IEC 61207-7:2013 includes the terminology, definitions, statements and tests that are specific to tuneable semiconductor laser gas analyzers, which utilize tuneable semiconductor laser absorption spectroscopy (TSLAS). It applies to all aspects of analyzers utilizing TSLAS for the concentration measurement of one or more gas components in a gaseous mixture or vapour. It applies to analyzers utilizing tuneable semiconductor lasers as sources and utilizing absorption spectroscopy, such as direct absorption, FMS, WMS, multi-pass absorption spectroscopy, CRDS, ICOS, PAS and CEAS techniques, etc.
SAE EIASTD 656B-2006 (SAE EIASTD656B-2006)
I/O Buffer Information Specification (IBIS) Version 4.2
In order to enable an industry standard method to electronically transport IBIS modeling data between semiconductor vendors, EDA tool vendors, and end customers, this template is proposed. The intention of this template is to specify a consistent format that can be parsed by software, allowing EDA tool vendors to derive models compatible with their own products. One goal of this template is to represent the current state of IBIS data, while allowing a growth path to more complex models / methods (when deemed appropriate). This would be accomplished by a revision of the base template, and possibly the addition of new keywords or categories. Another goal of this template is to ensure that it is simple enough for semiconductor vendors and customers to use and modify, while ensuring that it is rigid enough for EDA tool vendors to write reliable parsers. Finally, this template is meant to contain a complete description of the I/O elements on an entire component. Consequently, several models will need to be defined in each file, as well as a table that equates the appropriate buffer to the correct pin and signal name.
SAE GEIASTD 0003-2006 (SAE GEIASTD0003-2006)
Long Term Storage of Electronic Devices
This document is generated to provide an industry standard for Long Term Storage (LTS) of electronic devices by drawing from the best long term storage practices currently known. For the purposes of this document, LTS is defined as any device storage for more than 12 months but typically much longer. While intended to address the storage of unpackaged semiconductors and packaged electronic devices, nothing in this standard precludes the storage of other items under the storage levels defined herein. Packaged Electronic Devices. Electronic Devices are defined as any packaged electrical, electronic, electro-mechanical (EEE) item, or assemblies using such items. This standard is intended to ensure that adequate reliability is achieved for devices in user applications after long term storage. Users are encouraged to request data from suppliers to this specification that demonstrates a successful storage life requested by the user. This standard is not intended to address built-in failure mechanisms that would take place regardless of storage conditions. Unpackaged semiconductors. Unpackaged semiconductors are semiconductor wafer or dice. User. The user of this long term storage standard may be any organization or entity who would store electronic devices or unpackaged semiconductors.
Standard Practice for Nomenclature for Wire Leads Used as Conductors in Electron Tubes
1.1 This practice covers rules for designating one, two, or three-piece round wire leads used as conductors through glass seals in electron tubes. Stranded leads and leads for semiconductors are excluded. 1.2 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard. 1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
Surface chemical analysis - Proposed procedure for certifying the retained areic dose in a working reference material produced by ion implantation
ISO/TR 16268:2009 specifies a procedure for the certification of the areic dose of an ion-implanted analyte element of atomic number larger than that of silicon retained in a working reference material (WoRM) intended for surface-analytical use. The WoRM is in the form of a polished (or similarly smooth-faced) wafer (also referred to as the host), of uniform composition and nominal diameter 50 mm or more, that has been ion-implanted with nominally one isotope of a chemical element (also referred to as the analyte), not already present in the host, to a nominal areic dose normally within the range 10 16 atoms/cm 2 to 10 13 atoms/cm 2 (i.e. the range of primary interest in semiconductor technology). The areic dose of the ion-implanted analyte retained in the WoRM wafer is certified against the areic dose of the same analyte retained in an ion-implanted silicon wafer having the status of a (preferably certified) secondary reference material (SeRM). Information is provided on the concept and the procedure for certification of the WoRM. There is also a description of the requirements for the reference materials, the comparative measurements and the actual certification. Supporting information on ion implantation, ion-implantation dosimetry, wavelength-dispersive X ray fluorescence spectroscopy and non-certified substitutes for unobtainable SeRMs is provided in four annexes. Sources and magnitudes of uncertainties arising in the certification process are detailed in a fifth annex.
S+ IEC 60079-11 Ed. 6.0 b:2011 (Incl. Redline version)
Explosive atmospheres û Part 11: Equipment protection by intrinsic safety "i"
IEC Standards+ 60079-11:2011 contains the International Standard and its Redline version. The Redline version is available in English only. The Redline version provides you with a quick and easy way to compare all the changes between this standard and its previous edition. The Redline version is not an official IEC Standard, only the current version of the standard is to be considered the official document. IEC 60079-11:2011 specifies the construction and testing of intrinsically safe apparatus intended for use in an explosive atmosphere and for associated apparatus, which is intended for connection to intrinsically safe circuits which enter such atmospheres. This type of protection is applicable to electrical equipment in which the electrical circuits themselves are incapable of causing an explosion in the surrounding explosive atmospheres. This standard is also applicable to electrical equipment or parts of electrical equipment located outside the explosive atmosphere or protected by another Type of Protection listed in IEC 60079-0, where the intrinsic safety of the electrical circuits in the explosive atmosphere may depend upon the design and construction of such electrical equipment or parts of such electrical equipment. The electrical circuits exposed to the explosive atmosphere are evaluated for use in such an atmosphere by applying this standard. The requirements for intrinsically safe systems are provided in IEC 60079-25. This standard supplements and modifies the general requirements of IEC 60079-0, except as indicated in Table 1. Where a requirement of this standard conflicts with a requirement of IEC 60079-0, the requirements of this standard shall take precedence. This sixth edition cancels and replaces the fifth edition of IEC 60079-11 published in 2006, the first edition of IEC 61241-11 published in 2005, and partially replaces the second edition of IEC 60079-27 published in 2008 and constitutes a full technical revision. The significant changes with respect to the previous edition are listed below: - Inclusion of non-edition specific references to IEC 60079-0. - The merging of the apparatus requirements for FISCO from IEC 60079-27. - The merging of the requirements for combustible dust atmospheres from IEC 61241-11. - Clarification of the requirements for accessories connected to intrinsically safe apparatus; such as chargers and data loggers. - Addition of new test requirements for opto-isolators. - Introduction of Annex H about ignition testing of semiconductor limiting power supply circuits.