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IEC 60749 Series - Mechanical and Climatic Test Methods

The IEC 60749 series of mechanical and climatic test methods is a 42 part series that covers a range of tests from the general to the nuanced. Together, IEC 60749 presents a thorough test method for semiconductor devices of many sorts, for use in varied environments and industries, with devices subjected to the degree of testing that is required of them.


IEC 60749-1 Ed. 1.0 b:2002

Semiconductor devices - Mechanical and climatic test methods - Part 1: General

Applicable to semiconductor devices (discrete devices and integrated circuits) and establishes provisions common to all the other parts of the series.


IEC 60749-2 Ed. 1.0 b:2002

Semiconductor devices - Mechanical and climatic test methods - Part 2: Low air pressure

Covers the testing of low air pressure on semiconductor devices. The test is intended primarily to determine the ability of component parts and materials to avoid voltage breakdown failures due to the reduced dielectric strength of air and other insulating materials at reduced pressures is only applicable to devices where the operating voltage exceeds 1 000 V. This test is applicable to all semiconductor devices provided they are in cavity type packages. The test is intended for military and space-related applications only.


IEC 60749-3 Ed. 2.0 en:2017

Semiconductor devices - Mechanical and climatic test methods - Part 3: External visual examination

IEC 60749-3:2017(E) is to verify that the materials, design, construction, markings, and workmanship of a semiconductor device are in accordance with the applicable procurement document. External visual inspection is a non-destructive test and applicable for all package types. The test is useful for qualification, process monitor, or lot acceptance. This edition includes the following significant technical changes with respect to the previous edition: a) reference to the need for ESD protection; b) inclusion of information on the phenomenon of tin whiskers; c) inclusion of an optional report form/checklist.


IEC 60749-4 Ed. 2.0 en:2017

Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST)

IEC 60749-4:2017(E) provides a highly accelerated temperature and humidity stress test (HAST) for the purpose of evaluating the reliability of non-hermetic packaged semiconductor devices in humid environments. This edition includes the following significant technical changes with respect to the previous edition: a) clarification of requirements for temperature, relative humidity and duration detailed in Table 1; b) recommendations that current limiting resistor(s) be placed in the test set-up to prevent test board or DUT damage; c) allowance of additional time-to-test delay or return-to-stress delay.


IEC 60749-5 Ed. 2.0 en:2017

Semiconductor devices - Mechanical and climatic test methods - Part 5: Steady-state temperature humidity bias life test

IEC 60749-5:2017(E) provides a steady-state temperature and humidity bias life test for the purpose of evaluating the reliability of non-hermetic packaged solid-state devices in humid environments. This second edition cancels and replaces the first edition published in 2003. This edition constitutes a technical revision. This edition includes the following significant technical changes with respect to the previous edition: a) correction of an error in an equation; b) inclusion of notes for guidance; c) clarification of the applicability of test conditions.


IEC 60749-6 Ed. 2.0 en:2017

Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature

IEC 60749-6:2017(E) is to test and determine the effect on all solid state electronic devices of storage at elevated temperature without electrical stress applied. This test is typically used to determine the effects of time and temperature, under storage conditions, for thermally activated failure methods and time-to-failure of solid state electronic devices, including non-volatile memory devices (data-retention failure mechanisms). This test is considered non-destructive but should preferably be used for device qualification. If such devices are used for delivery, the effects of this highly accelerated stress test will need to be evaluated. Thermally activated failure mechanisms are modelled using the Arrhenius equation for acceleration, and guidance on the selection of test temperatures and durations can be found in IEC 60749-43. This edition includes the following significant technical changes with respect to the previous edition: a) additional test conditions; b) clarification of the applicability of test conditions.


IEC 60749-7 Ed. 2.0 b:2011

Semiconductor devices - Mechanical and climatic test methods - Part 7: Internal moisture content measurement and the analysis of other residual gases

"IEC 60749-7:2011 specifies the testing and measurement of water vapour and other gas content of the atmosphere inside a metal or ceramic hermetically sealed device. The test is used as a measure of the quality of the sealing process and to provide information about the long-term chemical stability of the atmosphere inside the package. It is applicable to semiconductor devices sealed in such a manner but generally only used for high reliability applications such as military or aerospace. This test is destructive. This second edition cancels and replaces the first edition published in 2002 and constitutes a technical revision. This second edition has been completely re-written so as to align it with the text of the latest versions of MIL-STD-750, method 1018 and MIL-STD-883, method 1018. The main change is the removal of the two alternative methods formerly designated method 2 and method 3. "


IEC 60749-8 Ed. 1.0 b:2002

Semiconductor devices - Mechanical and climatic test methods - Part 8: Sealing

Applicable to semiconductor devices (discrete devices and integrated circuits), it determines the leak rate of semiconductor devices.


IEC 60749-9 Ed. 2.0 en:2017

Semiconductor devices - Mechanical and climatic test methods - Part 9: Permanence of marking

IEC 60749-9:2017(E) is to determine whether the marks on solid state semiconductor devices will remain legible when subjected to the application and removal of labels or the use of solvents and cleaning solutions commonly used during the removal of solder flux residue from the printed circuit board manufacturing process. This test is applicable for all package types. It is suitable for use in qualification and/or process monitor testing. The test is considered non-destructive. Electrical or mechanical rejects can be used for the purpose of this test. This edition includes the following significant technical changes with respect to the previous edition: a) revision to Clause 4 Equipment by a complete rewriting of Clause 3 Terms and definitions; b) additional variant adhesive tape pull test .


IEC 60749-10 Ed. 1.0 b:2002

Semiconductor devices - Mechanical and climatic test methods - Part 10: Mechanical shock

Describes a shock test intended to determine the suitability of component parts for use in electronic equipment which may be subjected to moderately severe shocks as a result of suddenly applied forces or abrupt changes in motion produced by rough handling, transportation, or field operation. Shock of this type may disturb operating characteristics, particularly if the shock pulses are repetitive. This is a destructive test. It is normally applicable to cavity-type packages.


IEC 60749-11 Ed. 1.0 b:2002

Semiconductor devices - Mechanical and climatic test methods - Part 11: Rapid change of temperature - Two-fluid-bath method

Defines the rapid change of temperature test method and the two-fluid-bath method. This test method may also be used, employing fewer cycles, to test the effect of immersion in heated liquids that are used for the purpose of cleaning devices. This test is applicable to all semiconductor devices. It is considered destructive unless otherwise detailed in the relevant specification.


IEC 60749-12 Ed. 2.0 b:2017

Semiconductor devices - Mechanical and climatic test methods - Part 12: Vibration, variable frequency

IEC 60749-12:2017 describes a test to determine the effect of variable frequency vibration, within the specified frequency range, on internal structural elements. This is a destructive test. It is normally applicable to cavity-type packages This second edition cancels and replaces the first edition published in 2002. This edition constitutes a technical revision. This edition includes the following significant technical changes with respect to the previous edition: a) alignment with MIL-STD-883J Method 2007, Vibration, variable frequency.


IEC 60749-13 Ed. 2.0 b:2018

Semiconductor devices - Mechanical and climatic test methods - Part 13: Salt atmosphere

IEC 60749-13:2018 describes a salt atmosphere test that determines the resistance of semiconductor devices to corrosion. It is an accelerated test that simulates the effects of severe sea-coast atmosphere on all exposed surfaces. It is only applicable to those devices specified for a marine environment. The salt atmosphere test is considered destructive. This edition includes the following significant technical changes with respect to the previous edition: a) alignment with MIL-STD-883J Method 1009.8, Salt Atmosphere (Corrosion), including information on conditioning and maintenance of the test chamber and mounting of test specimens (including explanatory figures).


IEC 60749-14 Ed. 1.0 b:2003

Semiconductor devices - Mechanical and climatic test methods - Part 14: Robustness of terminations (lead integrity)

Provides various tests for determining the integrity between the lead/package interface and the lead itself when the lead(s) are bent due to faulty board assembly followed by rework of the part for re-assembly. Applicable to all through-hole devices and surface-mount devices requiring lead forming by the user.


IEC 60749-15 Ed. 3.0 b:2020

Semiconductor devices - Mechanical and climatic test methods - Part 15: Resistance to soldering temperature for through-hole mounted devices

IEC 60749-15:2020 is available as IEC 60749-15:2020 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition. IEC 60749-15:2020 describes a test used to determine whether encapsulated solid state devices used for through-hole mounting can withstand the effects of the temperature to which they are subjected during soldering of their leads by using wave soldering. In order to establish a standard test procedure for the most reproducible methods, the solder dip method is used because of its more controllable conditions. This procedure determines whether devices are capable of withstanding the soldering temperature encountered in printed wiring board assembly operations, without degrading their electrical characteristics or internal connections. This test is destructive and may be used for qualification, lot acceptance and as a product monitor. The heat is conducted through the leads into the device package from solder heat at the reverse side of the board. This procedure does not simulate wave soldering or reflow heat exposure on the same side of the board as the package body. This edition includes the following significant technical changes with respect to the previous edition: - inclusion of new Clause 3, Terms and definitions; - clarification of the use of a soldering iron for producing the heating effect; - inclusion an option to use accelerated ageing.


IEC 60749-16 Ed. 1.0 b:2003

Semiconductor devices - Mechanical and climatic test methods - Part 16: Particle impact noise detection (PIND)

Defines a test aiming at detecting the presence of loose particles inside a cavity device such as, for example, chips of ceramic, pieces of bonding wire or solder balls (prills).


IEC 60749-17 Ed. 2.0 b:2019

Semiconductor devices - Mechanical and climatic test methods - Part 17: Neutron irradiation

IEC 60749-17:2019 is performed to determine the susceptibility of semiconductor devices to non-ionizing energy loss (NIEL) degradation. The test described herein is applicable to integrated circuits and discrete semiconductor devices and is intended for military- and aerospace-related applications. It is a destructive test. This edition includes the following significant technical changes with respect to the previous edition: updates to better align the test method with MIL-STD 883J, method 1017, including removal of restriction of use of the document, and a requirement to limit the total ionization dose; addition of a Bibliography, including US MIL- and ASTM standards relevant to this test method.


IEC 60749-18 Ed. 2.0 b:2019

Semiconductor devices - Mechanical and climatic test methods - Part 18: Ionizing radiation (total dose)

IEC 60749-18:2019 is also available as IEC 60749-18:2019 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition. IEC 60749-18:2019 provides a test procedure for defining requirements for testing packaged semiconductor integrated circuits and discrete semiconductor devices for ionizing radiation (total dose) effects from a cobalt-60 (60Co) gamma ray source. Other suitable radiation sources can be used. This document addresses only steady-state irradiations, and is not applicable to pulse type irradiations. It is intended for military- and aerospace-related applications. It is a destructive test. This edition includes the following significant technical changes with respect to the previous edition: - updates to subclauses to better align the test method with MIL-STD 883J, method 1019, including the use of enhanced low dose rate sensitivity (ELDRS) testing; - addition of a Bibliography, which includes ASTM standards relevant to this test method.


IEC 60749-19 Ed. 1.1 b:2010

Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength

"IEC 60749-19:2003+A1:2010 determines the integrity of materials and procedures used to attach semiconductor die to package headers or other substrates. This test method is generally only applicable to cavity packages or as a process monitor. It is not applicable for die areas greater than 10 mm2. It is also not applicable to flip chip technology or to flexible substrates. This consolidated version consists of the first edition (2003) and its amendment 1 (2010). Therefore, no need to order amendment in addition to this publication. "


IEC 60749-20 Ed. 3.0 b:2020

Semiconductor devices - Mechanical and climatic test methods - Part 20: Resistance of plastic encapsulated SMDs to the combined effect of moisture and soldering heat

IEC 60749-20:2020 is available as IEC 60749-20:2020 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition. IEC 60749-20:2020 provides a means of assessing the resistance to soldering heat of semiconductors packaged as plastic encapsulated surface mount devices (SMDs). This test is destructive. This edition includes the following significant technical changes with respect to the previous edition: - incorporation of a technical corrigendum to IEC 60749-20:2008 (second edition ); - inclusion of new Clause 3; - inclusion of explanatory notes.


IEC 60749-21 Ed. 2.0 b:2011

Semiconductor devices - Mechanical and climatic test methods - Part 21: Solderability

"IEC 60749-21:2011 establishes a standard procedure for determining the solderability of device package terminations that are intended to be joined to another surface using tin-lead (SnPb) or lead-free (Pb-free) solder for the attachment. This test method provides a procedure for 'dip and look' solderability testing of through hole, axial and surface mount devices (SMDs) as well as an optional procedure for a board mounting solderability test for SMDs for the purpose of allowing simulation of the soldering process to be used in the device application. The test method also provides optional conditions for ageing. This test is considered destructive unless otherwise detailed in the relevant specification. NOTE 1 This test method is in general accord with IEC 60068, but due to specific requirements of semiconductors, the following text is applied. NOTE 2 This test method does not assess the effect of thermal stresses which may occur during the soldering process. Reference should be made IEC 60749-15 or IEC 60749-20. This standard cancels and replaces the first edition published in 2004 and constitutes a technical revision. The significant change is the inclusion of Pb (lead)-free backward compatibility. "


IEC 60749-22 Ed. 1.0 b:2002

Semiconductor devices - Mechanical and climatic test methods - Part 22: Bond strength

Applicable to semiconductor devices (discrete devices and integrated circuits), this test measures bond strength or determine compliance with specified bond strength requirements


IEC 60749-23 Ed. 1.1 b:2011

Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life

"IEC 60749-23:2004+A1:2011 is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way, and is primarily used for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as ""burn-in"", may be used to screen for infant mortality related failures. The detailed use and application of burn-in is outside the scope of this standard. This consolidated version consists of the first edition (2004) and its amendment 1 (2011). Therefore, no need to order amendment in addition to this publication. "


IEC 60749-24 Ed. 1.0 b:2004

Semiconductor devices - Mechanical and climatic test methods - Part 24: Accelerated moisture resistance - Unbiased HAST

The unbiased highly accelerated stress test is performed for the purpose of evaluating the reliability of non-hermetically packaged solid-state devices in humid environments. It employs temperature and humidity under non-condensing conditions to accelerate the penetration of moisture through the external protective material or along the interface between the external protective material and the metallic conductors which pass through it.


IEC 60749-25 Ed. 1.0 b:2003

Semiconductor devices - Mechanical and climatic test methods - Part 25: Temperature cycling

Provides a test procedure for determining the ability of semiconductor devices and components and/or board assemblies to withstand mechanical stresses induced by alternating high and low temperature extremes. Permanent changes in electrical and/or physical characteristics can result from these mechanical stresses. Applies to single, dual and triple chamber temperature cycling and covers component and solder interconnection testing.


IEC 60749-26 Ed. 4.0 b:2018

Semiconductor devices - Mechanical and climatic test methods - Part 26: Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM)

IEC 60749-26:2018 establishes the procedure for testing, evaluating, and classifying components and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined human body model (HBM) electrostatic discharge (ESD). The purpose of this document is to establish a test method that will replicate HBM failures and provide reliable, repeatable HBM ESD test results from tester to tester, regardless of component type. Repeatable data will allow accurate classifications and comparisons of HBM ESD sensitivity levels. ESD testing of semiconductor devices is selected from this test method, the machine model (MM) test method (see IEC 60749-27) or other ESD test methods in the IEC 60749 series. Unless otherwise specified, this test method is the one selected. This fourth edition cancels and replaces the third edition published in 2013. This edition constitutes a technical revision. This standard is based upon ANSI/ESDA/JEDEC JS-001-2014. It is used with permission of the copyright holders, ESD Association and JEDEC Solid state Technology Association. This edition includes the following significant technical changes with respect to the previous edition: a) a new subclause relating to HBM stressing with a low parasitic simulator is added, together with a test to determine if an HBM simulator is a low parasitic simulator; b) a new subclause is added for cloned non-supply pins and a new annex is added for testing cloned non-supply pins.


IEC 60749-27 Ed. 2.1 b:2012

Semiconductor devices - Mechanical and climatic test methods - Part27: Electrostatic discharge (ESD) sensitivity testing - Machine model (MM)

IEC 60749-27:2006+A1:2012 Establishes a standard procedure for testing and classifying semiconductor devices according to their susceptibility to damage or degradation by exposure to a defined machine model (MM) electrostatic discharge (ESD). It may be used as an alternative test method to the human body model ESD test method. The objective is to provide reliable, repeatable ESD test results so that accurate classifications can be performed. This test method is applicable to all semiconductor devices and is classified as destructive. This consolidated version consists of the second edition (2006) and its amendment 1 (2012). Therefore, no need to order amendment in addition to this publication.


IEC 60749-29 Ed. 2.0 b:2011

Semiconductor devices - Mechanical and climatic test methods - Part 29: Latch-up test

"IEC 60749-29:2011 covers the I-test and the overvoltage latch-up testing of integrated circuits. The purpose of this test is toestablish a method for determining integrated circuit (IC) latch-up characteristics and to define latch-up failure criteria. Latch-up characteristics are used in determining product reliability and minimizing ""no trouble found"" (NTF) and ""electrical overstress"" (EOS) failures due to latch-up. This second edition cancels and replaces the first edition published in 2003 and constitutes a technical revision. The significant changes with respect to the previous edition include: - a number of minor technical changes; - the addition of two new annexes covering the testing of special pins and temperature calculations. "


IEC 60749-30 Ed. 1.1 b:2011

Semiconductor devices - Mechanical and climatic test methods - Part 30: Preconditioning of non-hermetic surface mount devices prior to reliability testing

"IEC 60749-30:2005+A1:2011 establishes a standard procedure for determining the preconditioning of non-hermetic surface mount devices (SMDs) prior to reliability testing. The test method defines the preconditioning flow for non-hermetic solid-state SMDs representative of a typical industry multiple solder reflow operation. These SMDs should be subjected to the appropriate preconditioning sequence described in this standard prior to being submitted to specific in-house reliability testing (qualification and/or reliability monitoring) in order to evaluate long term reliability (impacted by soldering stress). This consolidated version consists of the first edition (2005) and its amendment 1 (2011). Therefore, no need to order amendment in addition to this publication. "


IEC 60749-31 Ed. 1.0 b:2002

Semiconductor devices - Mechanical and climatic test methods - Part 31: Flammability of plastic-encapsulated devices (internally induced)

Applicable to semiconductor devices (discrete devices and integrated circuits), this test determines whether the device ignites due to internal heating caused by excessive overloads.


IEC 60749-32 Ed. 1.1 b:2010

Semiconductor devices - Mechanical and climatic test methods - Part 32: Flammability of plastic-encapsulated devices (externally induced)

"IEC 60749-32:2002+A1:2010 is applicable to semiconductor devices (discrete devices and integrated circuits). The object of this test is to determine whether the device ignites due to external heating. The test uses a needle flame, simulating the effect of small flames which may result from fault conditions within equipment containing the device. This consolidated version consists of the first edition (2002) and its amendment 1 (2010). Therefore, no need to order amendment in addition to this publication. "


IEC 60749-33 Ed. 1.0 b:2004

Semiconductor devices - Mechanical and climatic test methods - Part 33: Accelerated moisture resistance - Unbiased autoclave

"The unbiased autoclave test is performed to evaluate the moisture resistance integrity of non-hermetically packaged solid-state devices using moisture condensing or moisture saturated steam environments. It is a highly accelerated test which employs conditions of pressure, humidity and temperature under condensing conditions to accelerate moisture penetration through the external protective material or along the interface between the external protective material and the metallic conductors passing through it. "


IEC 60749-34 Ed. 2.0 b:2010

Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling

"IEC 60749-34:2010 describes a test method used to determine the resistance of a semiconductor device to thermal and mechanical stresses due to cycling the power dissipation of the internal semiconductor die and internal connectors. This happens when low-voltage operating biases for forward conduction (load currents) are periodically applied and removed, causing rapid changes of temperature. The power cycling test is intended to simulate typical applications in power electronics and is complementary to high temperature operating life (see IEC 60749-23). Exposure to this test may not induce the same failure mechanisms as exposure to air-to-air temperature cycling, or to rapid change of temperature using the two-fluid-baths method. This test causes wear-out and is considered destructive. This second edition cancels and replaces the first edition published in 2004 and constitutes a technical revision. The significant changes with respect from the previous edition include: - the specification of tighter conditions for more accelerated power cycling in the wire bond fatigue mode; - information that under harsh power cycling conditions high current densities in a thin die metalization might initiate electromigration effects close to wire bonds. "


IEC 60749-35 Ed. 1.0 b:2006

Semiconductor devices - Mechanical and climatic test methods - Part 35: Acoustic microscopy for plastic encapsulated electronic components

Defines the procedures for performing acoustic microscopy on plastic encapsulated electronic components. Provides a guide to the use of acoustic microscopy for detecting anomalies (delamination, cracks, mould-compound voids, etc.) reproducibly and non-destructively in plastic packages.


IEC 60749-36 Ed. 1.0 b:2003

Semiconductor devices - Mechanical and climatic test methods - Part 36: Acceleration, steady state

Provides a test for determining the effects of constant acceleration on cavity-type semiconductor devices. It is an accelerated test designed to indicate types of structural and mechanical weaknesses not necessarily detected in shock and vibration test.


IEC 60749-37 Ed. 1.0 b:2008

Semiconductor devices - Mechanical and climatic test methods - Part 37: Board level drop test method using an accelerometer

"Provides a test method that is intended to evaluate and compare drop performance of surface mount electronic components for handheld electronic product applications in an accelerated test environment, where excessive flexure of a circuit board causes product failure. The purpose is to standardize the test board and test methodology to provide a reproducible assessment of the drop test performance of surface-mounted components while producing the same failure modes normally observed during product level test."


IEC 60749-38 Ed. 1.0 b:2008

Semiconductor devices - Mechanical and climatic test methods - Part 38: Soft error test method for semiconductor devices with memory

"This part of IEC 60749 establishes a procedure for measuring the soft error susceptibility of semiconductor devices with memory when subjected to energetic particles such as alpha radiation. Two tests are described; an accelerated test using an alpha radiation source and an (unaccelerated) real-time system test where any errors are generated under conditions of naturally occurring radiation which can be alpha or other radiation such as neutron. To completely characterize the soft error capability of an integrated circuit with memory, the device must be tested for broad high energy spectrum and thermal neutrons using additional test methods. This test method may be applied to any type of integrated circuit with memory device."


IEC 60749-39 Ed. 2.0 b:2021

Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components

IEC 60749-39:2021 is available as IEC 60749-39:2021 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition. IEC 60749-39:2021 details the procedures for the measurement of the characteristic properties of moisture diffusivity and water solubility in organic materials used in the packaging of semiconductor components. These two material properties are important parameters for the effective reliability performance of plastic packaged semiconductors after exposure to moisture and being subjected to high-temperature solder reflow. This edition includes the following significant technical changes with respect to the previous edition: - updated procedure for "dry weight" determination.


IEC 60749-40 Ed. 1.0 b:2011

Semiconductor devices - Mechanical and climatic test methods - Part 40: Board level drop test method using a strain gauge

"IEC 60749-40:2011 is intended to evaluate and compare drop performance of a surface mount semiconductor device for handheld electronic product applications in an accelerated test environment, where excessive flexure of a circuit board causes product failure. The purpose is to standardize test methodology to provide a reproducible assessment of the drop test performance of a surface mounted semiconductor devices while duplicating the failure modes normally observed during product level test. This international standard uses a strain gauge to measure the strain and strain rate of a board in the vicinity of a component. "


IEC 60749-42 Ed. 1.0 b:2014

Semiconductor devices - Mechanical and climatic test methods - Part 42: Temperature and humidity storage

IEC 60749-42:2014 provides a test method to evaluate the endurance of semiconductor devices used in high temperature and high humidity environments. This test method is used to evaluate the endurance against corrosion of the metallic interconnection of chips of semiconductor devices contained in plastic moulded and other types of packages. It is also used as a means of accelerating the leakage phenomena due to the moisture penetration through the passivation film and as a pre-conditioning for various kinds of tests.


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