Customer Service:
Mon - Fri: 8:30 am - 6 pm EST

 Most recent

IEC 60747-8 Ed. 3.0 b:2010

Semiconductor devices - Discrete devices - Part 8: Field-effect transistors

"IEC 60747-8:2010 gives standards for the following categories of field-effect transistors:
- type A: junction-gate type;
- type B: insulated-gate depletion (normally on) type;
- type C: insulated-gate enhancement (normally off) type.
The main changes with respect to the previous edition are listed below.
a) ""Clause 3 Classification"" was moved and added to Clause 1.
b) ""Clause 4 Terminology and letter symbols"" was divided into ""Clause 3 Terms and definitions"" and ""Clause 4 Letter symbols"" was amended with additions and deletions.
c) Clause 5, 6 and 7 were amended with necessary additions and deletions.

This publication is to be read in conjunction with IEC 60747-1:2006."


Content Provider
International Electrotechnical Commission [iec]


Others Also Bought

Environmental testing - Part 2-6: Tests - Test Fc: Vibration (sinusoidal)
Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
Environmental testing - Part 2-27: Tests - Test Ea and guidance: Shock
Document History
Included in Packages
This standard is not included in any packages.
Amendments & Corrections
ANSI Logo

As the voice of the U.S. standards and conformity assessment system, the American National Standards Institute (ANSI) empowers its members and constituents to strengthen the U.S. marketplace position in the global economy while helping to assure the safety and health of consumers and the protection of the environment.

CUSTOMER SERVICE
NEW YORK OFFICE
ANSI HEADQUARTERS