Customer Service:
Mon - Fri: 8:30 am - 6 pm EST

 Historical

IEC 60747-9 Ed. 2.0 b:2007

Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)

"This part of IEC 60747 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs). The major changes with respect to the previous edition are mainly of an editorial nature. "


Content Provider
International Electrotechnical Commission [iec]


Others Also Bought

Quality management systems - Requirements
Semiconductor devices - Mechanical and climatic test methods - Part 25: Temperature cycling
Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling
Included in Packages
This standard is not included in any packages.
Amendments & Corrections
We have no amendments or corrections for this standard.
ANSI Logo

As the voice of the U.S. standards and conformity assessment system, the American National Standards Institute (ANSI) empowers its members and constituents to strengthen the U.S. marketplace position in the global economy while helping to assure the safety and health of consumers and the protection of the environment.

CUSTOMER SERVICE
NEW YORK OFFICE
ANSI HEADQUARTERS