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Reliability and Other Semiconductor Standards

Semiconductor Reliability Standards include tests for electrostatic discharge (ESD), radiation-hardness, longevity and life-span estimations through accelerated testing, as well as other varied tests for semiconductors and semiconductor devices.

 Radiation
 Reliability
 Tests
 ESD

Radiation

ASTM E722-19

Standard Practice for Characterizing Neutron Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for Radiation-Hardness Testing of Electronics

ASTM E720-16

Standard Guide for Selection and Use of Neutron Sensors for Determining Neutron Spectra Employed in Radiation-Hardness Testing of Electronics

ASTM E721-16

Standard Guide for Determining Neutron Energy Spectra from Neutron Sensors for Radiation-Hardness Testing of Electronics

ASTM F1190-18

Standard Guide for Neutron Irradiation of Unbiased Electronic Components

ASTM F1192-11(2018)

Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices

ASTM F1467-18

Standard Guide for Use of an X-Ray Tester (≈10 keV Photons) in Ionizing Radiation Effects Testing of Semiconductor Devices and Microcircuits

ASTM F1893-18

Guide for Measurement of Ionizing Dose-Rate Survivability and Burnout of Semiconductor Devices

ASTM F448-18

Standard Test Method for Measuring Steady-State Primary Photocurrent

ASTM F980-16

Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices

ASTM F996-11(2018)

Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current–Voltage Characteristics

Reliability

IEC 62374 Ed. 1.0 b:2007

Semiconductor devices - Time dependent dielectric breakdown (TDDB) test for gate dielectric films

IEC 62374-1 Ed. 1.0 b:2010

Semiconductor devices - Part 1: Time-dependent dielectric breakdown (TDDB) test for inter-metal layers

SAE SSB 1/001-2014 (SAE SSB1/001-2014)

Qualification and Reliability Monitors

SAE SSB 1/003A-2014 (SAE SSB1/003A-2014)

Acceleration Factors

Tests

IEC 62137-4 Ed. 1.0 b:2014

Electronics assembly technology - Part 4: Endurance test methods for solder joint of area array type package surface mount devices

ASTM F615M-95(2013)

Standard Practice for Determining Safe Current Pulse-Operating Regions for Metallization on Semiconductor Components (Metric)

ASTM F1894-98(2011)

Test Method for Quantifying Tungsten Silicide Semiconductor Process Films for Composition and Thickness

ASTM E493/E493M-11(2017)

Standard Practice for Leaks Using the Mass Spectrometer Leak Detector in the Inside-Out Testing Mode

IEC 62483 Ed. 1.0 b:2013

Environmental acceptance requirements for tin whisker susceptibility of tin and tin alloy surface finishes on semiconductor devices

IEC 62417 Ed. 1.0 b:2010

Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

IEC 62373 Ed. 1.0 b:2006

Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

ASTM F76-08(2016)e1

Standard Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors

IEEE C62.35-2010

Standard Test Methods for Avalanche Junction Semiconductor Surge-Protective Device Components

SAE AIR 1921-1985 (SAE AIR1921-1985)

Spark Igniter Semiconductor Resistance Measurement Using Controlled Energy Levels ( Reaffirmed: Jun 1994 )

SAE J 1879-2014 (SAE J1879-2014)

Handbook for Robustness Validation of Semiconductor Devices in Automotive Applications

ASTM F2113-01(2011)

Standard Guide for Analysis and Reporting the Impurity Content and Grade of High Purity Metallic Sputtering Targets for Electronic Thin Film Applications

SAE SSB 1/002-2014 (SAE SSB1/002-2014)

Environmental Tests and Associated Failure Mechanisms

SAE SSB 1/004A-2009 (SAE SSB1/004A-2009)

Failure Rate Estimating

ESD

IEC 61340-3-1 Ed. 2.0 b:2006

Electrostatics - Part 3-1: Methods for simulation of electrostatic effects - Human body model (HBM) electrostatic discharge test waveforms

IEC 61340-3-2 Ed. 2.0 b:2006

Electrostatics - Part 3-2: Methods for simulation of electrostatic effects - Machine model (MM) electrostatic discharge test waveforms

IEC 62615 Ed. 1.0 b:2010

Electrostatic discharge sensitivity testing - Transmission line pulse (TLP) - Component level

ANSI/ESD STM5.5.1-2016

ESD Association Standard Test Method for Electrostatic Discharge (ESD) Sensitivity Testing - Transmission Line Pulse (TLP) - Component Level

ANSI/ESD SP5.5.2-2007

Electrostatic Discharge Sensitivity Testing - Very Fast Transmission Line Pulse (VF-TLP) - Component Level

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