Customer Service:
Mon - Fri: 8:30 am - 6 pm EST

Semiconductors

Semiconductor particle testing standards are published by IEC and ASTM. The ASTM standard covers Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. The IEC standards cover Particle impact noise detection (PIND) and Soft error test method for semiconductor devices with memory.

ASTM F1192-11(2018)

Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices

1.1 This guide defines the requirements and procedures for testing integrated circuits and other devices for the effects of single event phenomena (SEP) induced by irradiation with heavy ions having an atomic number Z 2. This description specifically excludes the effects of neutrons, protons, and other lighter particles that may induce SEP via another mechanism. SEP includes any manifestation of upset induced by a single ion strike, including soft errors (one or more simultaneous reversible bit flips), hard errors (irreversible bit flips), latchup (persistent high conducting state), transients induced in combinatorial devices which may introduce a soft error in nearby circuits, power field effect transistor (FET) burn-out and gate rupture. This test may be considered to be destructive because it often involves the removal of device lids prior to irradiation. Bit flips are usually associated with digital devices and latchup is usually confined to bulk complementary metal oxide semiconductor, (CMOS) devices, but heavy ion induced SEP is also observed in combinatorial logic programmable read only memory, (PROMs), and certain linear devices that may respond to a heavy ion induced charge transient. Power transistors may be tested by the procedure called out in Method 1080 of MIL STD 750. 1.2 The procedures described here can be used to simulate and predict SEP arising from the natural space environment, including galactic cosmic rays, planetary trapped ions, and solar flares. The techniques do not, however, simulate heavy ion beam effects proposed for military programs. The end product of the test is a plot of the SEP cross section (the number of upsets per unit fluence) as a function of ion LET (linear energy transfer or ionization deposited along the ion's path through the semiconductor). This data can be combined with the system's heavy ion environment to estimate a system upset rate. 1.3 Although protons can cause SEP, they are not included in this guide. A separate guide addressing proton induced SEP is being considered. 1.4 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard. 1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use. 1.6 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

Available for Subscriptions

IEC 60749-16 Ed. 1.0 b:2003

Semiconductor devices - Mechanical and climatic test methods - Part 16: Particle impact noise detection (PIND)

Defines a test aiming at detecting the presence of loose particles inside a cavity device such as, for example, chips of ceramic, pieces of bonding wire or solder balls (prills).

Available for Subscriptions

IEC 60749-38 Ed. 1.0 b:2008

Semiconductor devices - Mechanical and climatic test methods - Part 38: Soft error test method for semiconductor devices with memory

"This part of IEC 60749 establishes a procedure for measuring the soft error susceptibility of semiconductor devices with memory when subjected to energetic particles such as alpha radiation. Two tests are described; an accelerated test using an alpha radiation source and an (unaccelerated) real-time system test where any errors are generated under conditions of naturally occurring radiation which can be alpha or other radiation such as neutron. To completely characterize the soft error capability of an integrated circuit with memory, the device must be tested for broad high energy spectrum and thermal neutrons using additional test methods. This test method may be applied to any type of integrated circuit with memory device."

Available for Subscriptions
ANSI Logo

As the voice of the U.S. standards and conformity assessment system, the American National Standards Institute (ANSI) empowers its members and constituents to strengthen the U.S. marketplace position in the global economy while helping to assure the safety and health of consumers and the protection of the environment.

Useful Links
CUSTOMER SERVICE
NEW YORK OFFICE
ANSI HEADQUARTERS
2024 © American National Standards Institute (ANSI) All Rights Reserved.