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IEC 60747-9 Ed. 3.0 b:2019

Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)

IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).
 This third edition includes the following significant technical changes with respect to the previous edition: 

     
  1. reverse-blocking IGBT and its related technical contents have been added;
    2.  
  2. reverse-conducting IGBT and its related technical contents have been added;
    3.  
  3. some parts of the previous edition have been amended, combined or deleted.
    4.  

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Content Provider
International Electrotechnical Commission [iec]

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