IEC 62047 Series - Micro-Electromechanical Devices - MEMS
The IEC 62047 series of semiconductor standards concerns itself with micro-electromechanical devices, also known as MEMS. This 22 standard series starts from the basics with terms, definitions, and general specs, and continues on to a range of measurements and test methods such as those for fatigue, compression, bending, and shearing.
IEC 62047-1 Ed. 2.0 b:2016
Semiconductor devices - Micro-electromechanical devices - Part 1: Terms and definitions
IEC 62047-1:2016 defines terms for micro-electromechanical devices including the process of production of such devices. This edition includes the following significant technical changes with respect to the previous edition: a) removal of ten terms; b) revision of twelve terms; c) addition of sixteen new terms.
IEC 62047-2 Ed. 1.0 b:2006
Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials
Specifies the method for tensile testing of thin film materials with length and width under 1 mm and thickness under 10 m, which are main structural materials for micro-electromechanical systems (MEMS), micromachines and similar devices. The main structural materials for MEMS, micromachines and similar devices have special features such as typical dimensions in the order of a few microns, a material fabrication by deposition, and a test piece fabrication by non-mechanical machining using etching and photolithography. This International Standard specifies the testing method, which enables a guarantee of accuracy corresponding to the special features.
IEC 62047-3 Ed. 1.0 b:2006
Semiconductor devices - Micro-electromechanical devices - Part 3: Thin film standard test piece for tensile testing
Specifies a standard test piece, which is used to guarantee the propriety and accuracy of a tensile testing system for thin film materials with length and width under 1 mm and thickness under 10 m, which are main structural materials for microelectromechanical systems (MEMS), micromachines and similar devices. It is based on such a concept that a tensile testing system can be guaranteed in propriety and accuracy, when the measured tensile strengths of the standard test pieces, whose tensile strength is pre-determined, are within the designated range. It also specifies the test pieces to minimize characteristics deviation among the pieces.
IEC 62047-4 Ed. 1.0 b:2008
Semiconductor devices - Micro-electromechanical devices - Part 4: Generic specification for MEMS
"IEC 62047-4:2008 describes the generic specifications for micro-electromechanical systems (MEMS) made by semiconductors, which are the basis for specifications given in other parts of this series for various types of MEMS applications such as sensors, RF MEMS, excluding optical MEMS, bio MEMS, micro TAS, and power MEMS. This standard specifies general procedures for quality assessment to be used in IECQ-CECC systems and establishes general principles for describing and testing of electrical, optical, mechanical and environmental characteristics. IEC 62047-4:2008 aids in the preparation of standards that define devices and systems made by micromachining technology, including but not limited to, material characterization and handling, assembly and testing, process control and measuring methods. MEMS described in this standard are basically made of semiconductor material. However, the statements made in this standard are also applicable to MEMS using materials other than semiconductor, for example, polymers, glass, metals and ceramic materials."
IEC 62047-5 Ed. 1.0 b:2011
Semiconductor devices - Micro-electromechanical devices - Part 5: RF MEMS switches
"IEC 62047-5:2011 describes terminology, definition, symbols, test methods that can be used to evaluate and determine the essential ratings and characteristic parameters of RF MEMS switches. The statements made in this standardization are also applicable to RF (Radio Frequency) MEMS (Micro-Electro-Mechanical Systems) switches with various structures, contacts (d.c. contact and capacitive contact), configurations (series and shunt), switching networks (SPST, SPDT, DPDT, etc.), and actuation mechanism such as electrostatic, electro-thermal, electromagnetic, piezoelectric, etc. The RF MEMS switches are promising devices in advanced mobile phones with multi-band/mode operation, smart radar systems, reconfigurable RF devices and systems, SDR (Software Defined Radio) phones, test equipments, tunable devices and systems, satellite, etc."
IEC 62047-6 Ed. 1.0 b:2009
Semiconductor devices - Micro-electromechanical devices - Part 6: Axial fatigue testing methods of thin film materials
"IEC 62047-6:2009 specifies the method for axial tensile-tensile force fatigue testing of thin film materials with a length and width under 1 mm and a thickness in the range between 0,1 ¦m and 10 ¦m under constant force range or constant displacement range. Thin films are used as main structural materials for MEMS and micromachines. The main structural materials for MEMS, micromachines, etc., have special features, such as typical dimensions of a few microns, material fabrication by deposition, andtest piece fabrication by means of non-mechanical machining, including photolithography. This International Standard specifies the axial force fatigue testing methods for micro-sized smooth specimens, which enables a guarantee of accuracy corresponding to the special features. The tests are carried out at room temperatures, in air, with loading applied to the test piece along the longitudinal axis."
IEC 62047-7 Ed. 1.0 b:2011
Semiconductor devices - Micro-electromechanical devices - Part 7: MEMS BAW filter and duplexer for radio frequency control and selection
"IEC 62047-7:2011 describes terms, definition, symbols, configurations, and test methods that can be used to evaluate and determine the performance characteristics of BAW resonator, filter, and duplexer devices as radio frequency control and selection devices. This standard specifies the methods of tests and general requirements for BAW resonator, filter, and duplexer devices of assessed quality using either capability or qualification approval procedures."
IEC 62047-8 Ed. 1.0 b:2011
Semiconductor devices - Micro-electromechanical devices - Part 8: Strip bending test method for tensile property measurement of thin films
"IEC 62047-8:2011 specifies the strip bending test method to measure tensile properties of thin films with high accuracy, repeatability, moderate effort of alignment and handling compared to the conventional tensile test. This testing method is valid for test pieces with a thickness between 50 nm and several mum, and with an aspect ratio (ratio of length to thickness) of more than 300. The hanging strip (or bridge) between two fixed supports are widely adopted in MEMS or micro-machines. It is much easier to fabricate these strips than the conventional tensile test pieces. The test procedures are so simple to be readily automated. This international standard can be utilized as a quality control test for MEMS production since its testing throughput is very high compared to the conventional tensile test."
IEC 62047-9 Ed. 1.0 b:2011
Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
"IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 ohmm to several millimeters."
IEC 62047-10 Ed. 1.0 b:2011
Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials
"IEC 62047-10:2011 specifies micro-pillar compression test method to measure compressive properties of MEMS materials with high accuracy, repeatability, and moderate effort of specimen fabrication. The uniaxial compressive stress-strain relationship of a specimen is measured, and the compressive modulus of elasticity and yield strength can be obtained. This standard is applicable to metallic, ceramic, and polymeric materials."
IEC 62047-11 Ed. 1.0 b:2013
Semiconductor devices - Micro-electromechanical devices - Part 11: Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems
IEC 62047-11:2013 specifies the test method to measure the linear thermal expansion coefficients (CLTE) of thin free-standing solid (metallic, ceramic, polymeric, etc.) micro-electro-mechanical system (MEMS) materials with length between 0,1 mm and 1 mm and width between 10 micrometre and 1 mm and thickness between 0,1 micrometre and 1 mm, which are main structural materials used for MEMS, micromachines and others. This test method is applicable for the CLTE measurement in the temperature range from room temperature to 30 % of a material's melting temperature.
IEC 62047-12 Ed. 1.0 b:2011
Semiconductor devices - Micro-electromechanical devices - Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures
"IEC 62047-12:2011 specifies a method for bending fatigue testing using resonant vibration of microscale mechanical structures of MEMS (micro-electromechanical systems) and micromachines. This standard applies to vibrating structures ranging in size from 10 m to 1 000 m in the plane direction and from 1 m to 100 m in thickness, and test materials measuring under 1 mm in length, under 1 mm in width, and between 0,1 m and 10 m in thickness. The main structural materials for MEMS, micromachine, etc. have special features, such as typical dimensions of a few microns, material fabrication by deposition, and test piece fabrication by means of non-mechanical machining, including photolithography. The MEMS structures often have higher fundamental resonant frequency and higher strength than macro structures. To evaluate and assure the lifetime of MEMS structures, a fatigue testing method with ultra high cycles (up to 10 12 ) loadings needs to be established. The object of the test method is to evaluate the mechanical fatigue properties of microscale materials in a short time by applying high load and high cyclic frequency bending stress using resonant vibration."
IEC 62047-13 Ed. 1.0 b:2012
Semiconductor devices - Micro-electromechanical devices - Part 13: Bend - and shear - type test methods of measuring adhesive strength for MEMS structures
"IEC 62047-13:2012 specifies the adhesive testing method between micro-sized elements and a substrate using the columnar shape of the specimens. This international standard can be applied to adhesive strength measurement of microstructures, prepared on a substrate, with width and thickness of 1 m to 1 mm, respectively. This standard specifies the adhesive testing method for micro-sized-elements in order to optimally select materials and processing conditions for MEMS devices. This standard does not particularly restrict test piece material, test piece size and performance of the measuring device, since the materials and size of MEMS device components range widely and testing machine for micro-sized materials has not been generalized. "
IEC 62047-14 Ed. 1.0 b:2012
Semiconductor devices - Micro-electromechanical devices - Part 14: Forming limit measuring method of metallic film materials
"IEC 62047-14:2012 describes definitions and procedures for measuring the forming limit of metallic film materials with a thickness range from 0,5 m to 300 m. The metallic film materials described herein are typically used in electric components, MEMS and micro-devices. When metallic film materials used in MEMS (see 2.1.2 of IEC 62047-1:2005) are fabricated by a forming process such as imprinting, it is necessary to predict the material failure in order to increase the reliability of the components. Through this prediction, the effectiveness of manufacturing MEMS components by a forming process can also be improved, because the period of developing a product can be reduced and manufacturing costs can thus be decreased. This standard presents one of the prediction methods for material failure in imprinting process. "
IEC 62047-18 Ed. 1.0 b:2013
Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials
IEC 62047-18:2013 specifies the method for bend testing of thin film materials with a length and width under 1 mm and a thickness in the range between 0,1 micrometre and 10 micrometre. This International Standard specifies the bend testing and test piece shape for micro-sized smooth cantilever type test pieces, which enables a guarantee of accuracy corresponding to the special features.
IEC 62047-19 Ed. 1.0 b:2013
Semiconductor devices - Micro-electromechanical devices - Part 19: Electronic compasses
IEC 62047-19:2013 defines terms, definitions, essential ratings and characteristics, and measuring methods of electronic compasses. This standard applies to electronic compasses composed of magnetic sensors and acceleration sensors, or magnetic sensors alone. This standard applies to electronic compasses for mobile electronic equipment.
IEC 62047-20 Ed. 1.0 b:2014
Semiconductor devices - Micro-electromechanical devices - Part 20: Gyroscopes
IEC 62047-20:2014 specifies terms and definitions, ratings and characteristics, and measuring methods of gyroscopes. Gyroscopes are primarily used for consumer, general industries and aerospace applications. MEMS and semiconductor lasers are widely used for device technology of gyroscopes.
IEC 62047-21 Ed. 1.0 b:2014
Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials
IEC 62047-21:2014 specifies the determination of Poisson's ratio from the test results obtained by the application of uniaxial and biaxial loads to thin-film micro-electromechanical systems (MEMS) materials with lengths and widths less than 10 mm and thicknesses less than 10 µm.
IEC 62047-22 Ed. 1.0 b:2014
Semiconductor devices - Micro-electromechanical devices - Part 22: Electromechanical tensile test method for conductive thin films on flexible substrates
IEC 62047-22:2014 specifies a tensile test method to measure electromechanical properties of conductive thin micro-electromechanical systems (MEMS) materials bonded on non-conductive flexible substrates. Conductive thin-film structures on flexible substrates are extensively utilized in MEMS, consumer products, and flexible electronics. The electrical behaviours of films on flexible substrates differ from those of freestanding films and substrates due to their interfacial interactions. Different combinations of flexible substrates and thin films often lead to various influences on the test results depending on the test conditions and the interfacial adhesion. The desired thickness of a thin MEMS material is 50 times thinner than that of the flexible substrate, whereas all other dimensions are similar to each other.
