Customer Service:
Mon - Fri: 8:30 am - 6 pm EST

 Most recent

IEC 60749-23 Ed. 1.1 b:2011

Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life

"IEC 60749-23:2004+A1:2011 is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way, and is primarily used for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as ""burn-in"", may be used to screen for infant mortality related failures. The detailed use and application of burn-in is outside the scope of this standard. This consolidated version consists of the first edition (2004) and its amendment 1 (2011). Therefore, no need to order amendment in addition to this publication. "


Content Provider
International Electrotechnical Commission [iec]


Others Also Bought

Amendment 1 - Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating ...
Semiconductor devices - Mechanical and climatic test methods - Part 22: Bond strength
Semiconductor devices - Mechanical and climatic test methods - Part 30: Preconditioning of non-hermetic surface ...
Document History
We have no document history for this standard.
Included in Packages
This standard is not included in any packages.
Amendments & Corrections
We have no amendments or corrections for this standard.
ANSI Logo

As the voice of the U.S. standards and conformity assessment system, the American National Standards Institute (ANSI) empowers its members and constituents to strengthen the U.S. marketplace position in the global economy while helping to assure the safety and health of consumers and the protection of the environment.

CUSTOMER SERVICE
NEW YORK OFFICE
ANSI HEADQUARTERS